Merge #951

951: (embassy-rp): Implementation of generic flash mutation access r=Dirbaio a=MathiasKoch

I have attempted to utilize the work done in `rp2040-flash` by implementing `embedded-storage` traits on top, for RP2040.

Concerns:
1. ~~Should the DMA be paused where I have put a FIXME note? `DMA_CHx.ctrl_trig().write(|w| { w.set_en(false) })`? If so, how to properly do that without have control over the peripheral for the DMA channels? And if so, I assume we should only re-enable/unpause the ones that were enabled before?~~
2. ~~Should I make sure core2 is halted as part of this code? I am not sure if https://github.com/jannic/rp2040-flash/blob/ea8ab1ac807a7ab2b28a18bb5ca2e42495bb744d/examples/flash_example.rs#L103-L109 is heavy/slow code to run?~~
3. ~~Any good way of making this configurable over `FLASH_SIZE`, `WRITE_SIZE` and `ERASE_SIZE` without doing it as generics or parameters, as those make it possible to do differing configs throughout the same program, which feels wrong? Preferably, a compile-time option?~~


**EDIT:**
I have implemented the flash API here under the assumption that all external QSPI nor flashes are infact `Multiwrite` capable, as this makes it possible to use the ROM function for writes of 1 bytes at a time.

I have also added a HIL test for this, but because HIL tests are running 100% from RAM and I wanted to make sure it still works when running from flash, I have also added an example testing erase/write cycles of entire sectors, as well as single bytes in multi-write style.

Ping `@Dirbaio` 

Co-authored-by: Mathias <[email protected]>
Co-authored-by: Vincent Stakenburg <[email protected]>
Co-authored-by: Joakim Hulthe <[email protected]>
Co-authored-by: Alex Martens <[email protected]>
Co-authored-by: Ulf Lilleengen <[email protected]>
Co-authored-by: Dario Nieuwenhuis <[email protected]>

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